LPCVD Titanium Nitride for ULSIs

N. Yokoyama, K. Hinode, Y. Homma

Journal of The Electrochemical Society

Thin Film PhysicsEngineeringStep CoverageThin Film Process TechnologyChemical Deposition +16

Characterization of WSi<i>x</i>/GaAs Schottky contacts

T. Ohnishi, N. Yokoyama, Hidetoshi Onodera, +2

Applied Physics Letters

SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceEngineering +10

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Digh Hisamoto, Katsuyoshi Washio, +2

IEEE Transactions on Electron Devices

EngineeringSilicon On InsulatorSemiconductor DeviceStrained-si MosfetsWafer Scale Processing +14

Low-temperature plasma oxidation of GaAs

N. Yokoyama, T. Mimura, K. Odani, +1

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringOxidation ApparatusEngineering +11

256-Mb DRAM circuit technologies for file applications

G. Kitsukawa, Masashi Horiguchi, Y. Kawajiri, +16

IEEE Journal of Solid-State Circuits

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureExperimental 256-Mb Dram +17

Orientation effect of self-aligned source/drain planar GaAs Schottky barrier field-effect transistors

N. Yokoyama, Hidetoshi Onodera, T. Ohnishi, +1

Applied Physics Letters

Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringField-effect Transistors +7

An experimental 220 MHz 1 Gb DRAM

Masashi Horiguchi, T. Sakata, Tomonori Sekiguchi, +18

Electrical EngineeringEngineeringFlash MemoryMulti-channel Memory ArchitectureIn-memory Database +9

256 Mb DRAM technologies for file applications

G. Kitsukawa, Masashi Horiguchi, Y. Kawaijiri, +15

Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyComputer Engineering +12

Process and properties of Pt/Pb(Zr, Ti)O₃/Pt integrated ferroelectric capacitors

Kazuyoshi Torii, Hiroshi Kawakami, H. Miki, +9

Integrated ferroelectrics

Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryFerroelectric Application +18

Improvement in GaAs MESFET performance due to piezoelectric effect

Tsunenobu Onodera, T. Ohnishi, N. Yokoyama, +1

IEEE Transactions on Electron Devices

SemiconductorsDevice ModelingElectrical EngineeringSemiconductor TechnologyEngineering +11