N. Yokoyama

LPCVD Titanium Nitride for ULSIs

N. Yokoyama, K. Hinode, Y. Homma · Journal of The Electrochemical Society · 1991 · 84 citations

Thin Film Physics, Engineering, Step Coverage +18

Characterization of WSi<i>x</i>/GaAs Schottky contacts

T. Ohnishi, N. Yokoyama, Hidetoshi Onodera et al. · Applied Physics Letters · 1983 · 79 citations

Semiconductors, Materials Engineering, Electrical Engineering +12

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Digh Hisamoto, Katsuyoshi Washio et al. · IEEE Transactions on Electron Devices · 2002 · 66 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Low-temperature plasma oxidation of GaAs

N. Yokoyama, T. Mimura, K. Odani et al. · Applied Physics Letters · 1978 · 46 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

256-Mb DRAM circuit technologies for file applications

G. Kitsukawa, Masashi Horiguchi, Y. Kawajiri et al. · IEEE Journal of Solid-State Circuits · 1993 · 39 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19