Concepedia

T. Ohnishi

TO

Statistics

Publications

15

Citations

454

H-Index

13

Active since

1981

Affiliations

Fujitsu (Japan)(Current)

Toyota Motor Corporation (Japan)

Toyota Motor Corporation (Switzerland)

Toyota Central Research and Development Laboratories (Japan)

T. Ohnishi is an author at Fujitsu (Japan) specializing in engineering, microelectronics, and semiconductor devices.

Publications per year

1981–2014

15

Publications

15

Characterization of WSi<i>x</i>/GaAs Schottky contacts

T. Ohnishi, N. Yokoyama, Hidetoshi Onodera et al. · Applied Physics Letters · 1983 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's

Naoki Yokoyama, T. Ohnishi, K. Odani et al. · IEEE Transactions on Electron Devices · 1982 · 65 citations

Engineering, Electrical Engineering, Materials Science +15

A GaAs 1K static RAM using tungsten silicide gate self-aligned technology

Naoki Yokoyama, T. Ohnishi, Hidetoshi Onodera et al. · IEEE Journal of Solid-State Circuits · 1983 · 35 citations

Engineering, Electrical Engineering, Microelectronics +12

Orientation effect of self-aligned source/drain planar GaAs Schottky barrier field-effect transistors

N. Yokoyama, Hidetoshi Onodera, T. Ohnishi et al. · Applied Physics Letters · 1983 · 34 citations

Engineering, Electrical Engineering, Materials Science +13

Neutron induced single-event burnout of IGBT

T. Shoji, Shuichi Nishida, T. Ohnishi et al. · 2010 · 32 citations

Engineering, Electrical Engineering, Physics +13

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