TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's

Abstract

It has been found that TiW silicide film forms Schottky contacts on GaAs which are extremely stable even at temperatures of up to 850°C. Using this silicide for gate material, a novel self-alignment technique for GaAs MESFET's has been developed. A minimum propagation delay of 50 ps with 1.5-µ gate logic and successful fabrication of 1-kbit fixed address GaAs static memory cell arrays which are based on E/D type DCFL's indicate that TiW silicide gate self-alignment technology is a very promising candidate for achieving ultra-high-speed GaAs MESFET LSI/VLSI's.