Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

Advances in AFM for the electrical characterization of semiconductors

Rachel A. Oliver · Reports on Progress in Physics · 2008 · 204 citations

Engineering, Electrical Engineering, Materials Science +17

Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon

Koushik Biswas, S. Kal · Microelectronics Journal · 2005 · 160 citations

Engineering, Materials Engineering, Materials Science +17

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

C. Sire, S. Blonkowski, Michael J. Gordon et al. · Applied Physics Letters · 2007 · 127 citations

Engineering, Electrical Engineering, Materials Science +17

Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy

Werner Frammelsberger, Günther Benstetter, Janice Kiely et al. · Applied Surface Science · 2005 · 54 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +12

Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

S. Kremmer, H. Wurmbauer, Christian Teichert et al. · Journal of Applied Physics · 2005 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +17