Applied Physics Letters · 1997 · 43 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsGallium NitrideGallium Nitride (Gan) MaterialsNitridationNitride Thin FilmsPlasma-assisted NitridationStrained Layer StructuresStrained-layer HeterostructuresSurface Atomic Structure
In situ scanning tunneling microscopy and time-resolved reflection high-energy electron diffraction measurements were performed to study the nitridation process of the As-terminated GaAs(001)-(2×4) surface by using electron cyclotron resonance plasma-assisted molecular-beam epitaxy. We report the real-space atomic structure of the coherently strained (3×3)-ordered GaN monolayer on GaAs(001) after a limited-exposure nitridation process and the atomically smooth morphology of this nitrided surface. The unique (3×3) phase is found consisting of nitrogen dimers and a regular array of missing nitrogen rows in both [1̄10] and [110] directions.
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S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations