Applied Physics Letters · 1990 · 13 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingIii-v SemiconductorsIon ImplantationSemiconductor Device MaterialsSilicon MaterialsCarrier ConcentrationDopant ActivationDopant ImplantationElectron MobilityRapid Thermal AnnealingSheet ResistanceSilicon DopingThermal Annealing
Dual implantations of 150 keV Si+ ions and 160 keV P+ ions with the same dose of 1×1015/ cm2 were performed at 200 °C. Si3 N4 encapsulated samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. The carrier concentration profiles show that the Si dopant is highly activated and its indiffusion is effectively reduced with the help of P+ implantation and rapid thermal annealing. The highest carrier concentration of 5×1019 /cm3 , corresponding to an activation of 70%, an average electron mobility of 750 cm2 /V s, and a sheet resistance of 11 Ω/⧠, has been obtained in Si+ and P+ dually implanted InP after rapid thermal annealing at 850 °C for 5 s.
14
Incoherent annealing of implanted layers in GaAs
Donna E. Davies, P.J. McNally, J.P. Lorenzo et al. · IEEE Electron Device Letters · 1982 · 53 citations