R. Heckingbottom

Arsenic stabilization of InP substrates for growth of Ga<i>x</i>In1−<i>x</i>As layers by molecular beam epitaxy

Graham J. Davies, R. Heckingbottom, Hideo Ohno et al. · Applied Physics Letters · 1980 · 108 citations

Materials Science, Surface Characterization, Material Analysis +12

Ion implantation in compound semiconductors–an approach based on solid state theory

R. Heckingbottom, T. Ambridge · Radiation Effects · 1973 · 89 citations

Semiconductors, Materials Science, Electrical Engineering +14

Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−<i>x</i>Al<i>x</i>As system

R. Heckingbottom · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 87 citations

Aluminium Nitride, Engineering, Al Content +16

Structure of Vanadium Dioxide

R. Heckingbottom, J. W. Linnett · Nature · 1962 · 64 citations · Full text

Materials Science, Inorganic Chemistry, Crystal Structure +5

Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects

R. Heckingbottom, Graham J. Davies, K. A. Prior · Surface Science · 1983 · 62 citations

Materials Science, Engineering, Kinetic Aspects +6