Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

Materials Science, Engineering, Physics +8

Vapor pressures and phase equilibria in the GaAs system

John R. Arthur · Journal of Physics and Chemistry of Solids · 1967 · 388 citations

Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

Federico Capasso, W. T. Tsang, Albert L. Hutchinson et al. · Applied Physics Letters · 1982 · 305 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique

C. T. Foxon, John A. Harvey, B.A. Joyce · Journal of Physics and Chemistry of Solids · 1973 · 266 citations

Electrical Engineering, Engineering, Rf Semiconductor +9

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Semiconductors, Materials Science, Electrical Engineering +11