Stoichiometric disturbances in ion implanted compound semiconductors

Abstract

Disturbances in the stoichiometry of compound semiconductors which result from ion implantation are calculated using a Boltzmann transport equation approach. Results for 50-keV boron, 150-keV silicon, and 400-keV selenium implanted into silicon carbide, indium phosphide, and gallium arsenide are presented. Possible complications in the annealing of such implants are discussed.