Publication | Closed Access
Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates
11
Citations
10
References
1996
Year
Electrical EngineeringEngineeringSi SubstratesHgcdte Epitaxial LayersSurface ScienceApplied PhysicsMultilayer HeterostructuresSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthOrientation Dependence
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