M. Nagashima - Concepedia

Author

M. Nagashima

National Defense Academy of Japan

Also Known As

M. Nagashima, Mitsuhiro Nagashima, Mitsuhiro Nagashima Mitsuhiro Nagashima, Nagashima, M.

Publications

240

Citations

H-Index

Concepts

All Affiliations

National Defense Academy of Japan NEC (Japan)Fujitsu (Japan)

About

M. Nagashima is an author at National Defense Academy of Japan specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	170
2	Applied Physics	6	6	133
3	Natural Sciences	3	3	78
4	Chemistry	3	3	72
5	Chemical Engineering	2	2	37

M. Nagashima

Publications

187

Citations

H-Index

Page 1

	Year	Citations
Near infrared optical properties of laser ablated VO2 thin films by ellipsometry M. Nagashima, Hideo Wada Thin Solid Films Optical MaterialsEngineeringLaser PhotochemistryOptical PropertiesSpectroscopy	1998	35
The oxygen deficiency effect of VO<sub>2</sub> thin films prepared by laser ablation M. Nagashima, Hideo Wada Journal of materials research/Pratt's guide to venture capital sources Materials ScienceEngineeringSurface ScienceApplied PhysicsLaser Applications	1997	32
Design and performance of 256x256 bolometer-type uncooled infrared detector Hideo Wada, M. Nagashima, Naoki Oda, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Optical MaterialsEngineeringX 256CalibrationOptical Properties	1998	30
Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition H. Ebe, Takuya Okamoto, H. Nishino, Journal of Electronic Materials Materials ScienceMaterials EngineeringChemical EngineeringIi-vi SemiconductorEngineering	1996	22
HgCdTe and CdTe(1 1 3)<i>B</i> growth on Si(112)5° off by molecular beam epitaxy M. Kawano, A. Ajisawa, N. Oda, Applied Physics Letters	1996	17
Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing K. Maruyama, H. Nishino, Takuya Okamoto, Journal of Electronic Materials Materials EngineeringMaterials ScienceChemical EngineeringIi-vi SemiconductorEngineering	1996	15
Fabrication process for 256 x 256 bolometer-type uncooled infrared detector Hideo Wada, M. Nagashima, Masayuki Kanzaki, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringFlat Microbridge StructureThin Film Process TechnologyVacuum DeviceMicrobridge Structures	1997	13
AFM observation for the oxygen deficiency effect on the surface morphology of VO2 thin films M. Nagashima, Hideo Wada Journal of Crystal Growth Materials ScienceSurface CharacterizationEngineeringSurface AnalysisSurface Science	1997	12
Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates K. Shigenaka, Kazunobu Matsushita, Lisa Sugiura, Journal of Electronic Materials Electrical EngineeringEngineeringSi SubstratesHgcdte Epitaxial LayersSurface Science	1996	11

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