A. Ajisawa

Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing

A. Ajisawa, Naoki Oda · Journal of Electronic Materials · 1995 · 45 citations

Electrical Engineering, Engineering, Hgcdte Diode Characteristics +5

4*4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Delta beta electrooptic guided-wave directional couplers

K. Komatsu, Kiichi Hamamoto, M. Sugimoto et al. · Journal of Lightwave Technology · 1991 · 35 citations

Photonics, Electrical Engineering, Optical Materials +14

Gigahertz-bandwidth InGaAsP/InP optical modulators/switches with double-hetero waveguides

M. Fujiwara, A. Ajisawa, Yoshimasa Sugimoto et al. · Electronics Letters · 1984 · 22 citations

Optical Materials, Engineering, Optical Modulation +17

Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structure

A. Ajisawa, M. Fujiwara, J. Shimizu et al. · Electronics Letters · 1987 · 19 citations

Photonics, Electrical Engineering, Optical Materials +15

HgCdTe and CdTe(1 1 3)<i>B</i> growth on Si(112)5° off by molecular beam epitaxy

M. Kawano, A. Ajisawa, N. Oda et al. · Applied Physics Letters · 1996 · 17 citations