Japanese Journal of Applied Physics · 2003 · 46 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceEtching ProcessesPlasma-surface InteractionsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsX-ray Photoelectron SpectroscopyChamber Pressure OptimizationDry EtchingEtch RateEtchingOxidationPlasma EtchingSelective EtchingWet Etching
A systematic study of the selective etching of GaN over Al0.28Ga0.72N was performed using Cl2/N2/O2 inductively coupled plasmas (ICP). Highly selective etching at high GaN etch rate is realized by optimizing the O2 flow rate, the ICP power and the chamber pressure. Maximum etching selectivity of about 60:1 at a GaN etch rate of 320 nm/min has been demonstrated. X-ray photoelectron spectroscopy (XPS) analysis shows that the effective oxidation of AlGaN due to the addition of a small fraction of O2 is crucial to obtain highly selective etching at high GaN etch rate.
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Inductively coupled plasma etching of GaN
R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 214 citations
Natural Sciences, Materials Engineering, Materials Science +17
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
R. Coffie, D. Buttari, S. Heikman et al. · IEEE Electron Device Letters · 2002 · 63 citations
Comparison of plasma etch techniques for III–V nitrides
R. J. Shul, G.A. Vawter, C. G. Willison et al. · Solid-State Electronics · 1998 · 53 citations