Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment

Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption

R. S. Becker, G. S. Higashi, Yves J. Chabal et al. · Physical Review Letters · 1990 · 352 citations

Engineering, Spontaneous Phase Transition, Chemistry +16

Dependence of thin-oxide films quality on surface microroughness

T. Ohmi, M. Miyashita, M. Itano et al. · IEEE Transactions on Electron Devices · 1992 · 300 citations

Materials Science, Electrical Engineering, Engineering +13

Structure of Si(100)H: Dependence on the H chemical potential

John E. Northrup · Physical review. B, Condensed matter · 1991 · 300 citations

Engineering, Physics, Surface Chemistry +15

Figuring with subnanometer-level accuracy by numerically controlled elastic emission machining

Kazuto Yamauchi, Hidekazu Mimura, Kouji Inagaki et al. · Review of Scientific Instruments · 2002 · 275 citations · Full text

Engineering, Measurement, Microscopy +27

A Model for the Silicon Wafer Bonding Process

R. Stengl, T. Y. Tan, U. Gösele · Japanese Journal of Applied Physics · 1989 · 275 citations

Engineering, Integrated Circuits, Silicon On Insulator +16