Physical Review Letters · 1990 · 155 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesOxide SemiconductorsSemiconductor DefectsMetal-semiconductor Field-effect TransistorsMosfet NoiseNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsNoise Sources In Semiconductor MaterialsOxide Defect StatesPoint DefectsRadiation-induced Charge Trapping
We have found that the 1/f-noise magnitude of unirradiated metal-oxide-semiconductor (MOS) transistors correlates strikingly with the radiation-induced-hole trapping efficiency of the oxide (${f}_{\mathrm{OT}}$). This suggests that the previously unidentified defect that causes 1/f noise in MOS transistors is linked to the radiation-induced-hole trap, the ``E' center,'' or to a direct precursor (likely a simple oxygen vacancy) known to be present in ${\mathrm{SiO}}_{2}$ before irradiation. We derive a simple equation that relates the noise and ${f}_{\mathrm{OT}}$.
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