Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE - Concepedia

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Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

59

Citations

26

References

1983

Year

B. J. Skromme, T. S. Low, Thomas Roth, G. E. Stillman, John K. Kennedy, J. Abrokwah

Journal of Electronic Materials

SemiconductorsSemiconductor TechnologyElectrical EngineeringResidual DonorsEngineeringHydride VpeApplied PhysicsHigh-purity GaasCompound Semiconductor

References

	Year	Citations

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