Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

Gallium Arsenide and Related Compounds

Bob Wilson · Physics Bulletin · 1973 · 694 citations

Natural Sciences, Chemistry, Physics +10

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

E. W. Williams · Physical Review · 1968 · 302 citations

Natural Sciences, Materials Science, Physics +15

Luminescence and Excitation Spectra of Exciton Emission in GaAs

U. Heim, P. Hiesinger · physica status solidi (b) · 1974 · 174 citations

Natural Sciences, Materials Science, Optoelectronics +16

Photoluminescence of Cu-Doped Gallium Arsenide

H. J. Queisser, C. S. Fuller · Journal of Applied Physics · 1966 · 138 citations

Engineering, Materials Science, Physics +16