Photostimulated evaporation of SiO2 films by synchrotron radiation

Abstract

Irradiation by synchrotron radiation on SiO2 films induces continuous removal of this material at elevated temperatures. The photostimulated evaporation rate for a thermally grown SiO2 film increases steeply with temperature giving an activation energy of 0.7 eV. The experimental results indicate that photon-induced bond breaking assists decomposition and thermal desorption of the film. Applications to microfabrication of a line-and-space pattern and low-temperature cleaning of Si(100) surface are demonstrated.