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Synchrotron radiation-excited chemical-vapor deposition and etching

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1987

Year

Abstract

Photoexcited chemical-vapor deposition (CVD) and etching using synchrotron radiation as an exciting light source were experimentally demonstrated. CVD of silicon nitride film and etching of Si and SiO2 by SF6+O2 gases are described in detail. In several reaction systems, it was found that the surface photoexcitation was an important mechanism. Reaction models for gas-phase excitation and surface excitation were proposed.