Synchrotron radiation-excited chemical vapor deposition of Si<i>x</i>N<i>y</i>H<i>z</i> film

Abstract

The photochemical vapor deposition of SixNyHz films (y/x≤1.1) is demonstrated, using the vacuum UV (VUV) from synchrotron radiation (SR) for the first time. In the configuration with the beam axis parallel to the substrate surface, the deposition rate achieved is about 0.05 nm/min for a 100 mA ring current and a 2.7/13.3 Pa SiH4/N2 pressure. Values of about nine times larger are obtained in the perpendicular configuration. It is shown that decomposition of adsorbed molecules by SR irradiation is the primary process involved in deposition in the perpendicular configuration.