Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy

Abstract

Silicon-doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019 cm−3 show only a low carrier concentration of 8×1017 cm−3. LVM spectroscopy shows that SiGa donors are compensated predominantly by [Si-X] complexes, where X has been assigned previously to a gallium vacancy (VGa). Other compensating impurities are not present in the layers at significant concentrations.

References

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	Year	Citations
Dynamics of film growth of GaAs by MBE from Rheed observations J.H. Neave, B.A. Joyce, Peter J. Dobson, Applied Physics A Ii-vi SemiconductorEngineeringPhysicsCrystal Growth TechnologyApplied Physics	1983	955
The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs Young G. Chai, Robert H. Chow, C. E. C. Wood Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	1981	151
Silicon doping of MBE-grown GaAs films J.H. Neave, Peter J. Dobson, J. J. Harris, Applied Physics A Electrical EngineeringEngineeringApplied PhysicsSilicon DopingSemiconductor Material	1983	78
Si-defect concentrations in heavily Si-doped GaAs: Changes induced by annealing J. K. Kung, W. G. Spitzer Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringAnnealing EffectsLocalized Vibrational Mode	1974	72
GaAs-AlGaAs tunnel junctions for multigap cascade solar cells D. L. Miller, S. W. Zehr, J. S. Harris Journal of Applied Physics EngineeringAlgaas Solar CellsSemiconductor MaterialsOptoelectronic DevicesPhotovoltaics	1982	67
High-resolution measurements of localized vibrational mode infrared absorption of Si-doped GaAs W. M. Theis, W. G. Spitzer Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSi-doped GaasAbsorption SpectroscopySilicon On Insulator	1984	62
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy Moty Heiblum, W. I. Wang, L. Osterling, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringOptical MaterialsEngineering	1983	59
Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs P. D. Kirchner, Thomas N. Jackson, G. D. Pettit, Applied Physics Letters SemiconductorsGaas UniformlyElectrical EngineeringElectronic DevicesBulk Electron Density	1985	58
Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy Masaki Ogawa, T. Baba Japanese Journal of Applied Physics SemiconductorsMaterials ScienceEngineeringPhysicsSi-doped Gaas	1985	55
Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures G. Metze, A. R. Calawa Applied Physics Letters SemiconductorsMaterials ScienceSemiconductor TechnologyGrowth RatesEngineering	1983	50

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