R B Beall

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

R. Murray, R.C. Newman, M J L Sangster et al. · Journal of Applied Physics · 1989 · 153 citations

Engineering, Raman Measurements, Optoelectronic Devices +16

Investigation of the<i>DX</i>center in heavily doped<i>n</i>-GaAs

D. K. Maude, J.C. Portal, L. Dmowski et al. · Physical Review Letters · 1987 · 148 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +12

Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy

John Maguire, R. Murray, R.C. Newman et al. · Applied Physics Letters · 1987 · 126 citations

Semiconductors, Semiconductor Technology, Epitaxial Growth +15

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

E. Skuras, Ranjan Kumar, Robin L. Williams et al. · Semiconductor Science and Technology · 1991 · 85 citations

Electrical Engineering, Engineering, Physics +12

Migration of Si in δ-doped GaAs

R B Beall, J. B. Clegg, J. J. Harris · Semiconductor Science and Technology · 1988 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13