L. Osterling

Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs

M. Heiblum, E. E. Méndez, L. Osterling · Journal of Applied Physics · 1983 · 103 citations

Engineering, Materials Engineering, Materials Science +15

Electron interference effects in quantum wells: Observation of bound and resonant states

M. Heiblum, Massimo V. Fischetti, W. P. Dumke et al. · Physical Review Letters · 1987 · 102 citations

Engineering, Electrical Engineering, Physics +15

Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy

Moty Heiblum, W. I. Wang, L. Osterling et al. · Journal of Applied Physics · 1983 · 59 citations

Engineering, Materials Engineering, Materials Science +17

Evidence of hot-electron transfer into an upper valley in GaAs

Moty Heiblum, E. Calleja, Ian Anderson et al. · Physical Review Letters · 1986 · 55 citations

Engineering, Materials Science, Physics +17

Reactive ion etching damage to GaAs layers with etch stops

C. M. Knoedler, L. Osterling, Hadas Shtrikman · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 47 citations

Engineering, Electrical Engineering, Materials Science +17