IEEE Transactions on Electron Devices · 1985 · 29 citations · 6 references
EngineeringColor CorrectionImage SensorImage AnalysisCalibrationComputational ImagingComputational PhotographyInstrumentationMachine VisionComputer EngineeringVertical AntibloomingHigh-density 604DemosaicingOn-chip Color FiltersComputer VisionImage ProcessorImage TransmissionImage ResolutionImage Diagonal
A high-density 604 (H)× 576 (V) frame-transfer CCD color image sensor is realized with a pixel dimension of 10.0 (H) × 15.6 (V) µm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , an image diagonal of 7.5 mm, and a total chip area of 66 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . On-chip color filters and the use of a triple read-out register result in separate Cy, G, and Ye output signals. The imager is an n-p-n buried-channel CCD which can handle 125 times overexposure with vertical antiblooming. For the calculation of a suitable dopant distribution in the image, storage, and output sections, a four-step procedure has been developed. This procedure has proved to be successful and is much faster than an approach based exclusively on two-dimensional potential calculations.
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Charge-coupled imaging devices: Experimental results
M.F. Tompsett, G. F. Amelio, W.J. Bertram et al. · IEEE Transactions on Electron Devices · 1971 · 115 citations
Interline CCD image sensor with an antiblooming structure
Y. Ishihara, E. Oda, Hiroshi Tanigawa et al. · IEEE Transactions on Electron Devices · 1984 · 40 citations
An NPN structure 484 × 384 MOS imager for a single-chip color camera
N. Koike, I. Takemoto, Keigo Sato et al. · 1979 · 16 citations