I. Takemoto

MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

N. Koike, I. Takemoto, K. Satoh et al. · IEEE Transactions on Electron Devices · 1980 · 30 citations

Engineering, Electrical Engineering, Optoelectronics +16

2/3-inch format MOS single-chip color imager

Masakazu Aoki, H. Ando, S. Ohba et al. · IEEE Transactions on Electron Devices · 1982 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

Metal-oxide-semiconductor field-effect transistors fabricated in laterally seeded epitaxial Si layers on SiO2

Masanobu Miyao, M. Ohkura, I. Takemoto et al. · Applied Physics Letters · 1982 · 21 citations

Engineering, Electrical Engineering, Materials Science +14

An NPN structure 484 × 384 MOS imager for a single-chip color camera

N. Koike, I. Takemoto, Keigo Sato et al. · 1979 · 16 citations

Engineering, Electrical Engineering, Optoelectronics +13

MOS color imaging device

Masakazu Aoki, S. Ohba, I. Takemoto et al. · 1980 · 13 citations

Engineering, Biomedical Engineering, Color Vision +16