M. Ohkura

Performance of Poly-Si TFTs Fabricated by SELAX

M. Tai, Mutsuko Hatano, Satoshi Yamaguchi et al. · IEEE Transactions on Electron Devices · 2004 · 51 citations

Materials Engineering, Materials Science, Electrical Engineering +15

A New Model for Device Degradation in Low-Temperature N-Channel Polycrystalline Silicon TFTs Under AC Stress

Yoshiaki Toyota, T. Shiba, M. Ohkura · IEEE Transactions on Electron Devices · 2004 · 38 citations

Electrical Engineering, Engineering, New Model +15

12.4: Late‐News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly‐Si TFTs

Mutsuko Hatano, T. Shiba, M. Ohkura · SID Symposium Digest of Technical Papers · 2002 · 36 citations

Materials Engineering, Materials Science, Advanced Laser Processing +14

Effects of the Timing of AC Stress on Device Degradation Produced by Trap States in Low-Temperature Polycrystalline-Silicon TFTs

Yoshiaki Toyota, T. Shiba, M. Ohkura · IEEE Transactions on Electron Devices · 2005 · 33 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Process and device technologies for 1 Gbit dynamic random-access memory cells

T. Kaga, M. Ohkura, Fumio Murai et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 32 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18