SID Symposium Digest of Technical Papers · 2002 · 36 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCrystal EngineeringCrystal GrowthCrystallization ProcessesHigh-performance PolymersSemiconductor Crystal GrowthSilicon MaterialsCrystal Growth KineticsCrystallizationCrystallization BehaviorCrystallization In Thin FilmsCrystallization MechanismsSilicon Crystal GrowthThreshold Voltage
Abstract A novel method for laser‐recrystallized poly‐Si layer formation is proposed. The pulse‐duration‐controlled solid‐state laser is utilized to enhance the lateral crystal growth, and an excimer‐ laser‐crystallized poly‐Si layer is used as a precursor. The validity of the method is confirmed by superior TFT characteristics of high field‐effect mobility (n‐ch TIT:μ > 460 cm 2 /Vs, p‐ch TFT: μ > 150 cm 2 /Vs) with low threshold voltage deviation (Vth: 3 σ < 0.25 V).
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