12.4: Late‐News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly‐Si TFTs

Abstract

Abstract A novel method for laser‐recrystallized poly‐Si layer formation is proposed. The pulse‐duration‐controlled solid‐state laser is utilized to enhance the lateral crystal growth, and an excimer‐ laser‐crystallized poly‐Si layer is used as a precursor. The validity of the method is confirmed by superior TFT characteristics of high field‐effect mobility (n‐ch TIT:μ > 460 cm 2 /Vs, p‐ch TFT: μ > 150 cm 2 /Vs) with low threshold voltage deviation (Vth: 3 σ < 0.25 V).