Applied Physics Letters · 1986 · 82 citations · 11 references
SemiconductorsPhotonicsEngineeringPhysicsOptical PropertiesNon-linear OpticCompound SemiconductorApplied PhysicsPhotoelectric MeasurementPr MechanismSeveral Gaas/alas SuperlatticesOptical SpectroscopyElectromodulation SpectraOptoelectronicsSpectroscopic PropertyBiophysicsElectro-optics DevicePhotoreflectance Study
The photoreflectance (PR) spectra of several GaAs/AlAs superlattices have been measured at 300 and 77 K using monochromatic light sources (laser or monochromator) as a secondary (pump) beam, thus enabling us to study the wavelength dependence of the PR. We demonstrate for the first time that electromodulation spectra from superlattices can be fit by a third derivative functional line shape, thus making it possible to precisely determine energies, broadening parameters, amplitudes, and phases of the spectral features. This result greatly enhances the usefulness of electromodulation to study and characterize these structures. The wavelength dependence of the PR shows that there is more than one PR mechanism in superlattices, in contrast to bulk material.
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Excitons in GaAs quantum wells
Robert C. Miller, D. A. Kleinman · Journal of Luminescence · 1985 · 266 citations
O. J. Glembocki, B. V. Shanabrook, N. Bottka et al. · Applied Physics Letters · 1985 · 211 citations
Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +19