Electroreflectance Spectra of Al_<i>x</i>Ga_1−<i>x</i>As Alloys

Abstract

Room temperature electroreflectance measurements have been made on samples of Al x Ga 1−x As alloys, grown by liquid epitaxy. The variation of the different band transition energies, E 0 , E 1 , E 2 , etc. has been determined as a function of composition x. For each transition energy, the data have been fitted to the relation E = a + bx + cx 2 and hence the bowing parameter c determined. These experimental values of c are compared with the predicted values of Van Vechten.