J. N. Schulman - Concepedia

Author

J. N. Schulman

HRL Laboratories (United States)

Also Known As

J N Schulman, J. N. Schulman, J. SCHULMAN, J. Schulman, J.N Schulman, J.N. Schulman

161

Publications

5.5K

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)University of Illinois Urbana-Champaign California Institute of Technology The University of Tokyo University of Hawaii System

About

J. N. Schulman is an author at HRL Laboratories (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	37	80	4.7K
2	Applied Physics	36	76	4.5K
3	Natural Sciences	15	18	1.4K
4	Education	3	3	167
5	Chemistry	1	1	27

J. N. Schulman

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
Resonant tunneling diodes: models and properties Jian Sun, G.I. Haddad, Pinaki Mazumder, Proceedings of the IEEE Device ModelingElectrical EngineeringResonant InterbandEsaki Tunnel DiodesPhysics	1998	337
Band mixing in semiconductor superlattices J. N. Schulman, Yia‐Chung Chang Physical review. B, Condensed matter EngineeringBulk SemiconductorsElectronic StructureSemiconductorsLayer Thickness	1985	308
The CdTe/HgTe superlattice: Proposal for a new infrared material J. N. Schulman, T. C. McGill Applied Physics Letters EngineeringHgte LayersOptoelectronic DevicesSpectroscopic PropertyBand Gap	1979	258
Physics-based RTD current-voltage equation J. N. Schulman, Héctor J. De Los Santos, D. H. Chow IEEE Electron Device Letters Device ModelingNumerical Method For Partial Differential EquationElectrical EngineeringEngineeringTunneling Microscopy	1996	207
Advantages of the HgTe-CdTe superlattice as an infrared detector material D. L. Smith, T. C. McGill, J. N. Schulman Applied Physics Letters EngineeringSpectroscopic PropertyIi-vi SemiconductorOptical PropertiesNanoelectronics	1983	182
Complex band structures of crystalline solids: An eigenvalue method Yia‐Chung Chang, J. N. Schulman Physical review. B, Condensed matter Materials ScienceEngineeringPhysicsCrystal MaterialNatural Sciences	1982	168
New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies Robert C. Miller, A. C. Gossard, G. D. Sanders, Physical review. B, Condensed matter Wide-bandgap SemiconductorExtensive Valence-band MixingEngineeringWell-resolved Split PeakSemiconductors	1985	155
Electronic properties of the AlAs-GaAs (001) interface and superlattice J. N. Schulman, T. C. McGill Physical review. B, Condensed matter Ii-vi SemiconductorWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1979	143
Modification of optical properties of GaAs-Ga1−<i>x</i>Al<i>x</i>As superlattices due to band mixing Yia‐Chung Chang, J. N. Schulman Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsIi-vi Semiconductor	1983	143
New method for calculating electronic properties of superlattices using complex band structures J. N. Schulman, Yia‐Chung Chang Physical review. B, Condensed matter SemiconductorsSuperconducting MaterialElectrical EngineeringSemiconductor SuperlatticesEngineering	1981	142

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