Applied Physics Letters · 1979 · 258 citations · 10 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsOptoelectronicsElectronic Band StructureInfrared Optical MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptoelectronic DevicesOptoelectronic MaterialsBand GapBand Gap TuningNarrow-bandgap SemiconductorsOptical Band GapOptoelectronic PropertiesSemiconductor Infrared MaterialsSuperlattice MaterialsSuperlattices
We propose a new material which could be useful in a number of infrared optoelectronic devices. The material consists of alternating (100) layers of CdTe and HgTe. The band gap of this superlattice is adjustable from 0 to 1.6 eV depending on the thicknesses of the CdTe and HgTe layers. Details of the band-gap variation and the character of the band-edge states are presented.
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