The CdTe/HgTe superlattice: Proposal for a new infrared material

Abstract

We propose a new material which could be useful in a number of infrared optoelectronic devices. The material consists of alternating (100) layers of CdTe and HgTe. The band gap of this superlattice is adjustable from 0 to 1.6 eV depending on the thicknesses of the CdTe and HgTe layers. Details of the band-gap variation and the character of the band-edge states are presented.