Electronics Letters · 1987 · 24 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsChemical Vapor DepositionDopingIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresBase Layer DesignDoping ControlHeterojunction Bipolar TransistorsHeterojunction DevicesHeterojunctionsIn-situ DopingMetal-organic Chemical Vapor DepositionSemiconductor Heterojunctions
Double-heterojunction bipolar transistor structures in InP/GaInAs have been grown by low-pressure metal organic chemical vapour deposition. Good control of the Zn dopant in the GaInAs base layer was achieved, and devices with current gains up to 300 at current densities of 1.4kA/cm2 have been demonstrated.
6
InP/InGaAs double heterostructure bipolar transistors grown by MBE
P. Schuitemaker, P.A. Claxton, J.S. Roberts et al. · Electronics Letters · 1986 · 26 citations