N. Puetz

Partly gain-coupled 1.55 mu m strained-layer multiquantum-well DFB lasers

G.P. Li, T. Makino, R. W. Moore et al. · IEEE Journal of Quantum Electronics · 1993 · 101 citations

Photonics, Engineering, Mixed Index +12

Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

Jeffrey F. Wheeldon, Christopher E. Valdivia, Alexandre W. Walker et al. · Progress in Photovoltaics Research and Applications · 2010 · 78 citations

Wide-bandgap Semiconductor, Engineering, Photovoltaic Devices +18

Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery

L.E. Tarof, D.G. Knight, K. Fox et al. · Applied Physics Letters · 1990 · 70 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

Photoluminescence and double-crystal x-ray study of InGaAs/InP: Effect of mismatch strain on band gap

I. C. Bassignana, C. J. Miner, N. Puetz · Journal of Applied Physics · 1989 · 70 citations

Optical Materials, Engineering, Photoluminescence Peak Energy +20

Study of SEM preparation artefacts with correlative microscopy: Cell shrinkage of adherent cells by HMDS‐drying

Alisa Katsen‐Globa, N. Puetz, Michael Gepp et al. · Scanning · 2016 · 52 citations · Full text

Tissue Engineering, Engineering, Biomimetic Materials +26