L.E. Tarof - Concepedia

Author

L.E. Tarof

Nortel (Canada)

Also Known As

L. E. Tarof, L. Tarof, L.E. Tarof, Larry E. Tarof

Publications

682

Citations

H-Index

Concepts

All Affiliations

Nortel (Canada)Bell (Canada)Simon Fraser University Georgia Institute of Technology

About

L.E. Tarof is an author at Nortel (Canada) specializing in engineering, optoelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	583
2	Applied Physics	13	14	559
3	Electrical Engineering	13	14	554
4	Natural Sciences	1	1	13
5	Computer Engineering	1	1	56

L.E. Tarof

Publications

605

Citations

H-Index

Page 1

	Year	Citations
High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes L.E. Tarof, J. Yu, Robert A. Bruce, IEEE Photonics Technology Letters Semiconductor TechnologyElectrical EngineeringSeparate Absorption GradingEngineeringPlanar Separate Absorption	1993	81
Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery L.E. Tarof, D.G. Knight, K. Fox, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesPartial Charge SheetEngineering	1990	70
Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes Joseph W. Parks, A.W. Smith, Kevin F. Brennan, IEEE Transactions on Electron Devices Electrical EngineeringPhotoelectric SensorTheoretical StudyEngineeringPhysics	1996	60
Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes Cheng Ma, M. Jamal Deen, L.E. Tarof, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsHigh Voltage EngineeringGlow Discharge	1995	60
A simplified approach to time-domain modeling of avalanche photodiodes Amitava Bandyopadhyay, M. Jamal Deen, L.E. Tarof, IEEE Journal of Quantum Electronics Electrical EngineeringImage SensorEngineeringPhotoelectric SensorElectronic Engineering	1998	56
Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes Cheng Ma, M. Jamal Deen, L.E. Tarof IEEE Journal of Quantum Electronics EngineeringSeparate AbsorptionIntegrated CircuitsSagcm Inp-ingaas ApdSemiconductor Device	1995	38
Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product L.E. Tarof IEEE Photonics Technology Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringIntegrated CircuitsConventional Separate Absorption	1990	37
Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes Joe Haralson, Joseph W. Parks, Kevin F. Brennan, Journal of Lightwave Technology Wide-bandgap SemiconductorElectrical EngineeringCenter Breakdown DominanceEngineeringNumerical Simulation	1997	34
Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz L.E. Tarof Electronics Letters PhotonicsElectrical EngineeringPlanar Separate AbsorptionEngineeringRf Semiconductor	1991	29
Epitaxial layer thickness measurements by reflection spectroscopy L.E. Tarof, C. J. Miner, A. J. SpringThorpe Journal of Electronic Materials EngineeringReflection SpectroscopyOptical PropertiesSpectroscopyApplied Physics	1989	29

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