Commercial SiC device processing: Status and requirements with respect to SiC based power devices

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall et al. · Journal of Applied Physics · 2005 · 145 citations

Nanosheet, Engineering, Semiconductors +16

Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Reinhold Schörner, Peter Friedrichs, Dethard Peters · IEEE Transactions on Electron Devices · 1999 · 71 citations

Electrical Engineering, Classical Mosfet Behavior, Engineering +11

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Reinhold Schörner, Peter Friedrichs, Dethard Peters et al. · Applied Physics Letters · 2002 · 66 citations

Semiconductor Technology, Metal–oxide–semiconductor Transistors, Electrical Engineering +12

Catalytic graphitization and Ohmic contact formation on 4H–SiC

Weijie Lu, W. C. Mitchel, G. Landis et al. · Journal of Applied Physics · 2003 · 62 citations

Materials Science, Engineering, Carbon-based Material +10

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

Roland Rupp, Michael Treu, P. Türkes et al. · Materials science forum · 2005 · 18 citations

Electrical Engineering, Long Term Reliability, Engineering +12