G. Landis

Catalytic graphitization and Ohmic contact formation on 4H–SiC

Weijie Lu, W. C. Mitchel, G. Landis et al. · Journal of Applied Physics · 2003 · 62 citations

Materials Science, Engineering, Carbon-based Material +10

Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC

W. C. Mitchel, William D. Mitchell, G. Landis et al. · Journal of Applied Physics · 2007 · 48 citations

Engineering, Solid-state Chemistry, Vanadium Donor +16

Carbon structural transitions and ohmic contacts on 4H-SiC

Weijie Lü, W. C. Mitchel, Candis A. Thornton et al. · Journal of Electronic Materials · 2003 · 45 citations

Materials Science, Engineering, Carbon Structural Transitions +2

Ohmic contact properties of Ni/C film on 4H-SiC

Weijie Lu, W. C. Mitchel, G. Landis et al. · Solid-State Electronics · 2003 · 44 citations

Materials Science, Engineering, Applied Physics +4

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Stephen E. Saddow, T. E. Schattner, Jeff L. Brown et al. · Journal of Electronic Materials · 2001 · 42 citations

Materials Science, Substrate Surface Preparation, Engineering +8