Catalytic graphitization and Ohmic contact formation on 4H–SiC

Weijie Lu, W. C. Mitchel, G. Landis, +2

Journal of Applied Physics

Materials ScienceEngineeringCarbon-based MaterialGraphitic CarbonNanomaterials +8

Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC

W. C. Mitchel, William D. Mitchell, G. Landis, +3

Journal of Applied Physics

EngineeringSolid-state ChemistryVanadium DonorVanadium Acceptor LevelElectronic Structure +14

Carbon structural transitions and ohmic contacts on 4H-SiC

Weijie Lü, W. C. Mitchel, Candis A. Thornton, +2

Journal of Electronic Materials

Materials ScienceEngineeringCarbon Structural TransitionsApplied PhysicsCarbide

Ohmic contact properties of Ni/C film on 4H-SiC

Weijie Lu, W. C. Mitchel, G. Landis, +2

Solid-State Electronics

Materials ScienceEngineeringApplied PhysicsOhmic Contact PropertiesThin Film Process Technology +2

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Stephen E. Saddow, T. E. Schattner, Jeff L. Brown, +5

Journal of Electronic Materials

Materials ScienceSubstrate Surface PreparationEngineering4H-sic Epitaxial LayersSurface Science +6

Ohmic Contact Behavior of Carbon Films on SiC

Weijie Lü, W. C. Mitchel, Candis A. Thornton, +3

Journal of The Electrochemical Society

Materials ScienceCarbon FilmsElectrical EngineeringElectronic DevicesEngineering +9

Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC

M. E. Zvanut, Valery V. Konovalov, Haiyan Wang, +3

Journal of Applied Physics

Point DefectsEngineeringSemiconductorsElectronic DevicesElectron Spectroscopy +15

Compensation mechanism in high purity semi-insulating 4H-SiC

W. C. Mitchel, William D. Mitchell, H. E. SMITH, +3

Journal of Applied Physics

EngineeringPower ElectronicsBand GapSemiconductor DeviceDeep Levels +14

High temperature Hall effect measurements of semi-insulating 4H–SiC substrates

W. C. Mitchel, William D. Mitchell, M. E. Zvanut, +1

Solid-State Electronics

Semiconductor TechnologyElectrical EngineeringSemi-insulating 4H–sicEngineeringApplied Physics +3

Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC

S. Elhamri, W. C. Mitchel, William D. Mitchell, +3

Applied Physics Letters

Aluminium NitrideEngineeringTransport PropertiesQuantum MaterialsAln Interlayer +15