Michael Treu

Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

Michael Treu, Roland Rupp, Peter Blaschitz et al. · Conference record · 2007 · 84 citations

Electrical Engineering, Engineering, Power Device +11

Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues

Michael Treu, Roland Rupp, G. Sölkner · 2010 · 66 citations

Reliability, Electrical Engineering, Reliability Engineering +15

Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies

Roland Rupp, T. Laska, Oliver D. Häberlen et al. · 2014 · 59 citations

Power Switches, Electrical Engineering, Latest Gallium Nitride +11

"2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness

Roland Rupp, Michael Treu, Fanny Björk et al. · 2006 · 54 citations

Engineering, Sic Device Ruggedness, New Benchmark +17

Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Michael Treu, Roland Rupp, H. Kapels et al. · Materials science forum · 2001 · 50 citations

Materials Engineering, Electrical Engineering, Ni Schottky Diodes +6