J. Hilsenbeck

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Wide-bandgap Semiconductor, Piezoelectric Polarization Charges, Carrier Concentration Profiles +16

Determination of small-signal parameters of GaN-based HEMTs

E. Chigaeva, W. Walthes, Dirk Wiegner et al. · 2002 · 67 citations

Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +12

Commercial SiC device processing: Status and requirements with respect to SiC based power devices

Michael Treu, Roland Rupp, Peter Blaschitz et al. · Superlattices and Microstructures · 2006 · 36 citations

Electrical Engineering, Engineering, Power Device +6

Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy

R. Dimitrov, Arnan Mitchell, L.L. Wittmer et al. · Japanese Journal of Applied Physics · 1999 · 33 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +12

Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology

J. Hilsenbeck, F. Lenk, W. Heinrich et al. · 2003 · 33 citations

Electrical Engineering, Ka-band Applications, Engineering +10