Concepedia
Statistics
Publications
4
Citations
3K
H-Index
Active since
1976
Affiliations
Schott (Germany)(Current)
Ferdinand-Braun-Institut
L.L. Wittmer is an author at Schott (Germany) specializing in materials science, engineering, and semiconductor devices.
Publications per year
1976–1999
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations
Engineering, Materials Engineering, Materials Science +17
Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy
R. Dimitrov, L.L. Wittmer, H. P. Felsi et al. · physica status solidi (a) · 1998 · 34 citations
Engineering, Materials Engineering, Materials Science +16
Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
R. Dimitrov, Arnan Mitchell, L.L. Wittmer et al. · Japanese Journal of Applied Physics · 1999 · 33 citations
Characteristics of the indium-doped infrared sensing MOSFET(IRFET)
L. Forbes, L.L. Wittmer, K. W. Loh · IEEE Transactions on Electron Devices · 1976 · 12 citations
Engineering, Electrical Engineering, Materials Science +15
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