Heat generation in Si bipolar power devices: The relative importance of various contributions

Analysis and simulation of semiconductor devices

S. Selberherr · Mathematics and Computers in Simulation · 1985 · 2.1K citations · Full text

Engineering, Computer Engineering, Electrical Engineering +12

Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling

G. Wachutka · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1990 · 487 citations

Engineering, Electrical Engineering, Materials Science +17

A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

S.C. Jain, D.J. Roulston · Solid-State Electronics · 1991 · 402 citations

Engineering, Materials Science, Physics +14

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Solid-State Electronics · 1981 · 266 citations

Engineering, Electrical Engineering, Materials Science +14

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Microelectronics Reliability · 1982 · 217 citations

Engineering, Electrical Engineering, Materials Science +14