2013 · 36 citations · 10 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCompact Device ModelingCompact ModelingCurrent-voltage RelationsField-effect Transistor SimulationFin Field-effect TransistorsGate-all-around TransistorsMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet Modeling
A unified FinFET compact model is proposed for devices with complex fin cross-sections. It is represented in a normalized form, where only four different model parameters are needed. The proposed model accurately predicts the current-voltage characteristics of different FinFETs structures such as Double-Gate (DG), Cylindrical Gate-All-Around (Cy-GAA), or Rectangular Gate-All-Around (Re-GAA) FinFETs. In addition, for the first time, Trapezoidal Triple-Gate (T-TG) FinFETs are accurately modelled. Short-Channel-Effects (SCE) sub-models have been also implemented in the presented work. The model has been verified with TCAD data.
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BSIM—SPICE Models Enable FinFET and UTB IC Designs
Navid Paydavosi, Sriramkumar Venugopalan, Yogesh Singh Chauhan et al. · IEEE Access · 2013 · 116 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17
A Unified Analytic Drain–Current Model for Multiple-Gate MOSFETs
Bo Yu, Jooyoung Song, Yuan Yu et al. · IEEE Transactions on Electron Devices · 2008 · 68 citations