Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Michael J. Paisley, Zlatko Sitar, J. B. Posthill et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 362 citations

Engineering, Materials Engineering, Materials Science +17

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

M. Mizuta, Shinji Fujieda, Yoshishige Matsumoto et al. · Japanese Journal of Applied Physics · 1986 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Synthesis of metastable epitaxial zinc-blende-structure AlN by solid-state reaction

I. Petrov, E. Mojab, R. C. Powell et al. · Applied Physics Letters · 1992 · 192 citations

Natural Sciences, Materials Engineering, Materials Science +13

Electronic structure and bonding at SiC/AlN and SiC/BP interfaces

Walter R. L. Lambrecht, B. Segall · Physical review. B, Condensed matter · 1991 · 120 citations

Natural Sciences, Materials Science, Physics +17