D. Chandrasekhar

Strain-Driven Alloying in Ge/Si(100) Coherent Islands

S. A. Chaparro, Jeff Drucker, Y. Zhang et al. · Physical Review Letters · 1999 · 173 citations

Natural Sciences, Materials Science, Physics +17

Lattice and energy band engineering in AlInGaN/GaN heterostructures

M. Asif Khan, Jun Yang, G. Simin et al. · Applied Physics Letters · 2000 · 159 citations

Engineering, Materials Science, Physics +17

Evolution of Ge/Si(100) islands: Island size and temperature dependence

S. A. Chaparro, Y. Zhang, Jeff Drucker et al. · Journal of Applied Physics · 2000 · 149 citations

Natural Sciences, Materials Science, Physics +17

Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe

S. Strite, D. Chandrasekhar, David J. Smith et al. · Journal of Crystal Growth · 1993 · 105 citations

Engineering, Materials Engineering, Materials Science +13

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy

David J. Smith, D. Chandrasekhar, B. Sverdlov et al. · Applied Physics Letters · 1995 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +17