A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

C. R. Abernathy, S. J. Pearton, R. Caruso et al. · Applied Physics Letters · 1989 · 215 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Physical Properties of Graphite

Sanchi Mizushima · Journal of the Society of Materials Science Japan · 1965 · 215 citations · Full text

Materials Science, Graphene Nanomeshes, Engineering +5

<i>Physical Properties of Graphite</i>

W. N. Reynolds, G. L. Montet · Physics Today · 1970 · 194 citations

Materials Science, Engineering, Applied Physics +4

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence

D. J. Olego, M. Cardona · Physical review. B, Condensed matter · 1980 · 168 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +19