Concepedia
Statistics
Publications
15
Citations
402
H-Index
13
Active since
1987
Affiliations
AT&T (United States)(Current)
Max Planck Institute for Solid State Research
Nokia (United States)
Max Planck Society
J. Nagle is an author at AT&T (United States) specializing in engineering, applied physics, and physics.
Top concepts
EngineeringApplied PhysicsPhysicsElectrical EngineeringOptoelectronicsSemiconductorsMaterial ScienceQuantum MaterialsCondensed Matter PhysicsPhotonics
Publications per year
1987–2002
Angular dependence of phonon transmission through a Fibonacci superlattice
D. C. Hurley, Shin-ichiro Tamura, J. P. Wolfe et al. · Physical review. B, Condensed matter · 1988 · 56 citations
RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES
R. Merlín, K. Bajema, J. Nagle et al. · Le Journal de Physique Colloques · 1987 · 52 citations · Full text
Materials Science, Physics, Physical Acoustic +4
A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy
J. Nagle, R. J. Malik, D. Gershoni · Journal of Crystal Growth · 1991 · 48 citations
Electrical Engineering, Engineering, Physics +6
Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source
R. J. Malik, J. Nagle, M. Micovic et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 34 citations
Engineering, Si-dopant Fluxes, Semiconductor Device +18
Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells
Andrea Fiore, E. Rosencher, V. Berger et al. · Applied Physics Letters · 1995 · 34 citations
Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +17
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