IEEE Electron Device Letters · 1990 · 13 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsDevice CharacterizationDevice ReliabilityIntegrated Circuit FabricationNoise In Electronic DevicesNoise MeasurementSemiconductor ReliabilityCurrent NoiseFabricationFabrication ProcessesInterconnect NoiseMetallizationNoise Analysis In Integrated CircuitsNoise In Integrated CircuitsNondestructive Testing
Noise measurements were utilized to detect differences in fabrication processes on the layered TiW/Al metallization system. A dual-channel AC bridge system was used to measure the current noise of packaged 1.8- mu m-wide thin-film interconnections fabricated by a variety of processing parameters. The quick, nondestructive noise measurements were able to discriminate relative film group reliabilities and correlated well with results obtained from more conventional median-time-to-failure (MTF) testing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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