Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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Gallium vacancies and the yellow luminescence in GaN

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Hole Compensation Mechanism of P-Type GaN Films

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