High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +15

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 495 citations

Engineering, Materials Engineering, Materials Science +17

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

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Engineering, Materials Engineering, Materials Science +12

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

S. Keller, B.P. Keller, Yifeng Wu et al. · Applied Physics Letters · 1996 · 269 citations

Engineering, Materials Engineering, Materials Science +17

Nitridation process of sapphire substrate surface and its effect on the growth of GaN

Kazushige Uchida, A. Watanabe, Fumiko Yano et al. · Journal of Applied Physics · 1996 · 264 citations

Engineering, Materials Engineering, Materials Science +17