Atomic layer epitaxy of GaAs by chemical beam epitaxy

Molecular Layer Epitaxy

Jun‐ichi Nishizawa, Hitoshi Abe, Toru Kurabayashi · Journal of The Electrochemical Society · 1985 · 314 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dynamic RHEED observations of the MBE growth of GaAs

J.H. Neave, B.A. Joyce, Peter J. Dobson · Applied Physics A · 1984 · 187 citations

Natural Sciences, Materials Engineering, Materials Science +10

Atomic layer epitaxy of III-V binary compounds

S. M. Bedair, M. A. Tischler, T. Katsuyama et al. · Applied Physics Letters · 1985 · 146 citations

Engineering, Materials Engineering, Materials Science +17

New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka et al. · Applied Physics Letters · 1988 · 122 citations

Engineering, Materials Engineering, Materials Science +17

Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy

Atsutoshi Doi, Yoshinobu Aoyagi, Susumu Namba · Applied Physics Letters · 1986 · 116 citations

Natural Sciences, Materials Engineering, Materials Science +17