Molecular Layer Epitaxy

Jun‐ichi Nishizawa, Hitoshi Abe, Toru Kurabayashi

Journal of The Electrochemical Society

Thin Film PhysicsOptical MaterialsEngineeringMonolayer GrowthThin Film Process Technology +14

Dynamic RHEED observations of the MBE growth of GaAs

J.H. Neave, B.A. Joyce, Peter J. Dobson

Applied Physics A

PhysicsMbe GrowthApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth +1

Atomic layer epitaxy of III-V binary compounds

S. M. Bedair, M. A. Tischler, T. Katsuyama, +1

Applied Physics Letters

SemiconductorsIi-vi SemiconductorEpitaxial GrowthOptical MaterialsEngineering +12

New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka, +1

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringNew Growth MethodEngineering +13

Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy

Atsutoshi Doi, Yoshinobu Aoyagi, Susumu Namba

Applied Physics Letters

Materials ScienceSemiconductorsIi-vi SemiconductorOptical MaterialsEngineering +12

Mechanistic studies of the decomposition of trimethylaluminum on heated surfaces

D. W. Squire, Charles S. Dulcey, M. C. Lin

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceChemical EngineeringMechanistic StudiesEngineeringMethyl Radical +12

Self-limiting mechanism in the atomic layer epitaxy of GaAs

M. A. Tischler, S. M. Bedair

Applied Physics Letters

SemiconductorsMaterials EngineeringMaterials ScienceEpitaxial GrowthEngineering +11

Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)

Ming L. Yu, U. Memmert, T. F. Kuech

Applied Physics Letters

SemiconductorsIi-vi SemiconductorEpitaxial GrowthEngineeringUltraviolet Photoemission +11

Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system

Jun‐ichi Nishizawa, Toru Kurabayashi

Journal of Crystal Growth

Materials ScienceElectrical EngineeringEngineeringCrystal Growth TechnologyGrowth Kinetic Study +5

Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy

T. H. Chiu, W. T. Tsang, J. E. Cunningham, +1

Journal of Applied Physics

EngineeringCrystal Growth TechnologyChemical DepositionSemiconductorsDamped Intensity Oscillation +14