K. Mochizuki

New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka et al. · Applied Physics Letters · 1988 · 122 citations

Semiconductors, Materials Science, Electrical Engineering +15

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy

K. Kodama, M. Ozeki, K. Mochizuki et al. · Applied Physics Letters · 1989 · 57 citations

Semiconductors, Materials Science, Situ Investigation +12

A proposal for <i>p</i>-type ZnS1-<i>x</i>Se<i>x</i>–ZnTe superlattices

H. Fujiyasu, K. Mochizuki · Journal of Applied Physics · 1985 · 50 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +11

Properties of ZnTe-ZnSe and -ZnS superlattices prepared by hot wall epitaxy

H. Fujiyasu, K. Mochizuki, Yasuji Yamazaki et al. · Surface Science · 1986 · 44 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +6

Raman scattering from ZnTe-ZnSe strained-layer superlattices

Seiji Nakashima, Y. Nakakura, H. Fujiyasu et al. · Applied Physics Letters · 1986 · 43 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +12