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Kinetic processes in atomic-layer epitaxy of GaAs and AlAs using a pulsed vapor-phase method
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1987
Year
SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringAtomic-layer EpitaxyEngineeringPhysicsEpitaxial GrowthGrowth RateFilm ThicknessApplied PhysicsKinetic ProcessesPulsed Laser DepositionMolecular Beam EpitaxyPulsed Vapor-phase MethodOptoelectronicsChemical Vapor DepositionCompound Semiconductor
Atomic-layer epitaxy (ALE) has been developed for GaAs and AlAs using a pulsed vapor-phase method using metal-organic compounds and hydride. Growth rate has been investigated in detail as a function of various growth parameters. When arsine gas-pulse duration is increased, the growth rate decreases drastically once a film thickness [1 monolayer (ML) for GaAs(100), (110), and (111)B, 2 ML for AlAs(100) and (111)B, and 3 ML for AlAs(110)] has been reached. A model has been suggested to explain the result.